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CSD25211W1015 Images
- Manufacturer: Texas Instruments (TI)
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: 6-DSBGA (1x1.5)
- Description: MOSFET P-CH 20V 3.2A 6DSBGA
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CSD25211W1015 Specifications:
- MfrPart.: CSD25211W1015
- Mfr: Texas Instruments
- Description: MOSFET P-CH 20V 3.2A 6DSBGA
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tape & Reel (TR),Cut Tape (CT)
- Series: NexFET™
- PartStatus: Active
- FETType: P-Channel
- Technology: MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss): 20 V
- Current-ContinuousDrain(Id)@25°C: 3.2A (Ta)
- DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5V
- RdsOn(Max)@IdVgs: 33mOhm @ 1.5A, 4.5V
- Vgs(th)(Max)@Id: 1.1V @ 250µA
- GateCharge(Qg)(Max)@Vgs: 4.1 nC @ 4.5 V
- Vgs(Max): -6V
- InputCapacitance(Ciss)(Max)@Vds: 570 pF @ 10 V
- FETFeature: -
- PowerDissipation(Max): 1W (Ta)
- OperatingTemperature: -55°C ~ 150°C (TJ)
- MountingType: Surface Mount
- SupplierDevicePackage: 6-DSBGA (1x1.5)
- CSD25211W1015 TI, MOSFET P-CH 20V 3.2A 6DSBGA, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
CSD25211W1015, TI authentic parts in stock from TI authorized distributors, order today, can ship immediately.
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